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Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

机译：Ge-on-Si单光子雪崩二极管探测器：在1310和1550 nm波长处的设计，建模，制造和表征

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Warburton Ryan E; Intermite Giuseppe; Myronov Maksym; Allred Phil; Leadley David R; Gallacher Kevin; Paul Douglas J; Pilgrim Neil J; Lever Leon J M; Ikonic Zoran; Kelsall Robert W; Huante-Ceron Edgar; Knights Andrew P; Buller Gerald Stuart;
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年度 2013
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1. Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm [J] . Warburton R.E., Intermite G., Myronov M., IEEE Transactions on Electron Devices . 2013,第11期

机译：Ge-on-Si单光子雪崩二极管检测器：1310和1550 nm波长的设计，建模，制造和表征
2. Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/lnP avalanche diode gated at 1.25 GHz [J] . Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall Applied Physics Letters . 2013,第14期

机译：InGaAs / InP雪崩二极管的门控频率为1.25 GHz，在1310 nm处单光子检测效率高达50％
3. Design of Polymer Wavelength Splitter 1310 nm/1550 nm Based on Multimode Interferences [J] . V. Prajzler, O. Lyutakov, I. Huttel, Radioengineering . 2010,第4期

机译：基于多模干涉的1310 nm / 1550 nm聚合物波长分光器设计
4. Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths [C] . Intermite G., Warburton R.E., Myronov M., International Conference on Group IV Photonics . 2013

机译：台面几何Ge-on-Si单光子雪崩二极管探测器原型在1310 nm和1550 nm波长处的设计和性能
5. Design, fabrication, and characterization of mid wavelength infrared avalanche photodiode [D] . Mallick, Shubhrangshu 2008

机译：中波长红外雪崩光电二极管的设计，制造和表征
6. Custom-Technology Single-Photon Avalanche Diode Linear Detector Array for Underwater Depth Imaging [O] . Aurora Maccarone, Giulia Acconcia, Ulrich Steinlehner, 2021

机译：用于水下深度成像的定制技术单光子雪崩二极管线性探测器阵列
7. Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [O] . Warburton, Ryan E, Intermite, Giuseppe, Myronov, Maksym, 2013

机译：Ge-on-Si单光子雪崩二极管探测器：在1310和1550 nm波长处的设计，建模，制造和表征

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

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