L-band low power monolithic GaAs receiver front ends

摘要

Design aspects and performance of monolithic GaAs L-band receiver front ends intended for low power operation are discussed. Design philosophy which decreases the power consumption of the receivers has been adopted. 1 mm depletion type MESFET process (Triquint, USA) has been used to fabricate the circuits. In the simulation of the circuits MWSPICE and TOUCHSTONE software have been used. All the circuits are accessible for on-wafer measurement with Cascade's probe station.