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Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion

机译：聚酰亚胺钝化法对InP / InGaAs DHBT微波噪声瞬态的测量和仿真

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摘要

Measurement and simulation of microwave noise transient of InP/InGaAs DHBT with polyimide passivation is reported in this paper for the first time and is believed to contribute to the overall broadband shot noise. This work provides a better insight into the noise transient mechanism of InP HBTs due to polyimide passivation and can be used to improve the device and circuit reliability.

机译：本文首次报道了采用聚酰亚胺钝化处理的InP / InGaAs DHBT微波噪声瞬变的测量和模拟，相信对整个宽带散粒噪声有贡献。这项工作为因聚酰亚胺钝化而导致的InP HBT的噪声瞬变机制提供了更好的见解，可用于提高器件和电路的可靠性。

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Xiong Yong Zhong; Ng Geok-Ing; Wang Hong; Fu Jeffrey S.; K Radhakrishnan;
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年度 2001
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专利

1. Microwave noise performance of metamorphic InP/In{sub}0.53Ga{sub}0.47As/InP DHBT on GaAs substrates [J] . Yong Zhong Xiong, Geok-Ing Ng, Hong Wang, Microwave and optical technology letters . 2002,第4期

机译：GaAs衬底上变质InP / In {sub} 0.53Ga {sub} 0.47As / InP DHBT的微波噪声性能
2. 5.8 dBm P_dB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology [J] . Ge J., Yao H.-F., Wu D.-Y., Electronics Letters . 2012,第24期

机译：采用高击穿电压InP / InGaAs DHBT技术的5.8 dBm P _{dB 高增益W波段低噪声放大器}
3. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (mu-PCD) carrier lifetime measurement [J] . Lv YQ, Wang NL, Zhuang CQ, Semiconductor science and technology . 2006,第6期

机译：通过微波光电导衰减（mu-PCD）载流子寿命测量，InP / InGaAs / InP中InGaAs的均匀性
4. Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion [C] . European Microwave Conference . 2001

机译：用聚酰亚胺叠加的INP / INGAAS DHBT微波噪声瞬态测量和仿真
5. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth [D] . Rode, Johann Christian 2015

机译：超过1 THz带宽的大规模InP / InGaAs DHBT
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion [O] . Xiong Yong Zhong, Ng Geok-Ing, Wang Hong, 2001

机译：聚酰亚胺钝化法对InP / InGaAs DHBT微波噪声瞬态的测量和仿真
8. InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications [R] . Johnson, G. A., Biendender, M. D., Kapoor, V. J. 1991

机译：用于20 GHz应用的Inp和InGaas亚微米栅极微波功率晶体管

Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion

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