Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTsud

摘要

The design of a coplanar low-noise amplifier (LNA)is presented in this paper.Pseudomorphic high electron mobility transistors (PHEMTs),optimized for power applications,are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 -31 GHz frequency band with a 20 dB power gain.