An integrated design philosophy which combines physical device modelling and circuit simulation is applied for the design of Schottky-diode frequency multipliers for millimeter-wave applications. The physical model is based on the drift-diffudion theory. It also includes self-consistently image force lowering, tunnelling transport, current dependent recombination velocity at the Schottky contact and impact-ionization. This coupling enables to concurrently optimize the device electrical and geometrical parameters together with achievable output power, conversion efficiency and the required loads at the specific harmonics.
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