A Medium-Power Low-Noise Amplifier For X-BandudApplications

摘要

A monolithic front-end amplifier for X-bandudradar applications has been developed utilising conventionaludlow noise GaAs technology. The application requires lowudnoise figure, high output power, good input and outputudreturn loss, high gain and reduced chip area. Toudsimultaneously fulfil such conflicting requirements, properuddesign methods have been adopted. Measured results fromud8.5 to 9.6 GHz demonstrate a noise figure lower than 1.5 dB,uda small-signal gain of 29 dB, input and output return lossudover 20 dB, with an associated output power at -1 dB gainudcompression in excess of 17 dBm.