InP-based monolithic integrated PIN diode switches for mm-wave applications

摘要

We report on the measured performance of monolithic integrated mm-wave switching circuits which operate at Ka-Band. V-Band and W-Band as well as on a technology for multi-functional MMICs. The coplanar switches are using high-performance InGaAs PIN diodes as active switching elements. The focus of the illustrated measurement results is on the characteristics of the W-Band switches. The SPST (single-pole single-throw) switches exhibit a low minimum insertion loss of 0.66 dB (1.17 dB) at 85 GHz (84 GHz) with an extremely high corresponding isolation of 29.2 dB (24.5 dB). Even under extremely low DC-power consumption conditions of 0.95 mW (0.8 mW), the switches demonstrated impressive isolations of 23.7 dB (20.7 dB). Excellent mm-wave performance is also achieved with the 94 GHz SPDT (single-pole double-throw) switch. An insertion loss as low as 1.4 dB in transmit mode and 1.8 dB at 96 GHz in receive mode is obtained. A very high isolation value greater than 40 dB is observed. Furthermore, we are developing a heterointegration technology for multi-functional MMICs and present a first comparison between heterointegrated SPST switches (PIN + HFET layer structure) and the normal SPST switches (only PIN structure).