A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding

摘要

Microwave transistor stability is a real preoccupation of MMICs designers. In this paper, it is shown that the classical electrical lumped model is inappropriate to the FET stability study. A non linear finger-distributed modeling technique, based on an electromagnetic deem bedding, is presented. The derived model exhibits a very interesting capability to predict the electrical behavior of arbitrary shaped transistor. It also brings a real improvement in the FET analysis study.