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Simulation and measurement of optoelectronic performancesudof InP/InGaAs heterojunction bipolar phototransistor

机译：光电性能的模拟和测量 ud/ InGaAs异质结双极型光电晶体管的研制

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Physical modeling of an InP/lnGaAs phototransistor using a two dimensional finite elements program was performed. A good agreements were found with measurements. A large-signal model of the phototransistor has been developed and implemented in MDS.

机译：使用二维有限元程序对InP / InGaAs光电晶体管进行了物理建模。在测量中发现了很好的协议。光电晶体管的大信号模型已经开发并在MDS中实现。

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Chennafi Noureddine; Rumelhard Christian; Gonzalez Carmen; Thuret Julien;
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年度 1997
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专利

1. Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer [J] . Liu C.P., Seeds A.J. IEEE Microwave and Guided Wave Letters . 1997,第3期

机译：两端边缘耦合InP / InGaAs异质结光电晶体管光电混频器
2. Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors [J] . M. Borgarino, R. Plana, M. Fendler Solid-State Electronics . 2000,第1期

机译：InP / InGaAs异质结双极波导光电晶体管的低频噪声特性
3. High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2:1 Multiplexer and 1:2 Demultiplexer Modules Using 1-μm InP/InGaAs/InP Double Heterojunction Bipolar Transistors [J] . Yutaka ARAYASHIKI, Takashi KAMIZONO, Yukio OHKUBO, IEICE Transactions on Electronics . 2013,第6期

机译：使用1μmInP / InGaAs / InP双异质结双极晶体管的面向高比特率测量系统的低抖动113Gbit / s 2：1多路复用器和1：2解复用器模块
4. InP/InGaAs heterojunction phototransistors for optoelectronic receivers [C] . Houston, P.A., Helme, . 2004

机译：用于光电接收器的InP / InGaAs异质结光电晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Simulation and measurement of optoelectronic performancesudof InP/InGaAs heterojunction bipolar phototransistor [O] . Chennafi Noureddine, Rumelhard Christian, Gonzalez Carmen, 1997

机译：光电性能的模拟和测量 ud/ InGaAs异质结双极型光电晶体管的研制
8. InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy. [R] . Sung, W. J., Kopf, R. F., Werder, D. J., 2002

机译：通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。

Simulation and measurement of optoelectronic performancesudof InP/InGaAs heterojunction bipolar phototransistor

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