DC and Low Frequency Noise Characteristics of SiGeudn-MODFET’s.

摘要

This paper presents an investigation of the lowudfrequency noise properties of SiGe based n MODFET’sudthrough the characterization of both the gate current noiseudand the drain current noise including their correlation.udMeasurements versus bias and gate geometry have shownudthat this noise is generated through mobility fluctuations orudcarrier diffusion at the gate terminal and that carrierudnumber fluctuations are involved in drain currentudfluctuations. Microwave residual phase noise measurementsudhave shown that the up-conversion effect mainly occurs onudthe drain current noise.