Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs

摘要

A new theory is developed in this paper to explain the collapse of current gain in multi-finger power Al­GaAs/GaAs Heterojunction Bipolar Transistors. Two dif­ferent collapse patterns are investigated. The reasons be­hind this unwanted phenomenon are clarified using a sim­ple model to investigate the thermo-electrical interaction between the fingers. The method has been used to predict the collapse in AlGaAs/GaAs HBTs and the agreement is excellent.