Simulation of high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices

摘要

Two different mechanisms are proposed to explain and simulate the high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices: a) transversal propagation along die metallizations of the device, and b) limitations in the intrinsic equivalent circuit. The first mechanism is accounted for by using a distributed equivalent circuit, while the second one is modelled by means of a modified intrinsic equivalent circuit.