Design and technology of AlGaAs/GaAs HBT for high temperature circuits

摘要

In the last years HBT with strongly improved performance for application at room temperature [1, 2] have been demonstrated. However, the technology for high temperature devices and circuits must be adopted. The layer design and the technology of AlGaAs/GaAs HBT for high-temperature circuits up to 623 K is presented in this paper. As a possible application of these devices an operational amplifier circuit is fabricated and measured up to 473 K.