A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications

摘要

The monolithic integration of Tunneling Diodes (TDs)with other semiconductor devices,creates novel quantum functional devices and circuits with unique properties:the Negative Differential Resistance (NDR)and the extremely low DC power consumption.In this paper we present the design,fabrication and characterization of a Self-Oscillating Mixer (SOM)based on InP-HEMT TD technology.The circuit is based on a 2.526 GHZ VCO that draws a current of 1.3mA at 500mV and generates an output power of –21.5dBm on a 50 : load.The SOM is able to down-convert RF signals in the 2.25 –2.85 GHz band to an IF frequency in the 20-300 MHz band,with a conversion loss in the range 32-40 dB.