Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures

摘要

The properties and performances from 300K down to 50K of short gate InGaAs channel HEMTs on GaAs and InP substrates are compared. Original data are presented particularly how depend on temperature the capacitances, the transconductance and the cut-off frequencies. The results are interpreted in term of enhanced short channel and trapping effects due to high electric fields. The temperature evolutions of the device intrinsic parameters are compared versus technology, gatelength and biases.