Numerical study of the series resistances in deep-submicrometer recess gate MESFETs

摘要

We report on a new approach to the extraction of the series resistances in recess gate submicrometer MESFETs. The method is based on numerical simulation of the device characteristics using finite element description of the recess shape and realistically treatment of the surface effects. For the first time the contribution of the recess region in the total series resistance is estimated separately. The method is applied to 200 nm gate length MESFETs fabricated recently in the Nanoelectronics research centre at the Glasgow University.