An investigation on the reliability of AlGaAs/GaAs HEMTs

机译：AlGaAs / GaAs HEMT的可靠性研究

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The results of an investigation concerning reliability of AlGaAs/GaAs High Electron Mobility Transistor devices are presented.udSuch investigation, carried out on devices from two different manufacturers, has been performed under an ESA contract (CCN N. 2 to 6462/85/NL/JG(SC)) aimed at providing sufficient confidence in HEMT devices, so to allow their use in satellite low noise receivers.

机译：介绍了有关AlGaAs / GaAs高电子迁移率晶体管器件可靠性的研究结果。 ud根据ESA合同（CCN N. 2至6462/85 / NL）对来自两个不同制造商的器件进行了此类研究。 / JG（SC））旨在为HEMT设备提供足够的可信度，从而使其能够在卫星低噪声接收机中使用。

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Brambilla G.; DAmbrosio A.; Fattore G.; Galante P.; Tedeseo C.; Castellaneta G.;
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年度 1992
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专利

1. AlGaAs/GaAs based HEMTs, inverters and ring oscillators with InGaAs and AlGaAs etch-stop layers [J] . Ren F., Pearton S.J. Electronics Letters . 1991,第13期

机译：具有InGaAs和AlGaAs蚀刻停止层的基于AlGaAs / GaAs的HEMT，逆变器和环形振荡器
2. Investigation of gamma-radiation on electronic and optical properties in carbon delta-doping GaAs/AlGaAs HEMTs structures [J] . Daoudi Mahmoud, Kaouach Houda, Hosni Faouzi Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2016,第18期

机译：碳δ掺杂GaAs / AlGaAs HEMTs结构中γ辐射对电子和光学性质的研究
3. Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology [J] . Bushehri E., Thiede A. Electronics Letters . 1998,第10期

机译：采用AlGaAs / GaAs / AlGaAs HEMT技术的双桥6 Gsample / s跟踪和保持电路
4. High reliability of 0.1 /spl mu/m MMIC amplifiers on both AlGaAs/inGaAs/GaAs and InGaAs/InAlAs/InP HEMTs [C] . Chou, Y.C., Leung, . 2001

机译：在AlGaAs / inGaAs / GaAs和InGaAs / InAlAs / InP HEMT上均具有0.1 / spl mu / m MMIC放大器的高可靠性
5. Analysis and modeling of physical mechanisms contributing to the AlGaAs/GaAs heterojunction bipolar transistor reliability. [D] . Sheu, Shyh-Horng. 1997

机译：分析和建模有助于AlGaAs / GaAs异质结双极晶体管可靠性的物理机制。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. An investigation on the reliability of AlGaAs/GaAs HEMTs [O] . Brambilla G., DAmbrosio A., Fattore G., 1992

机译：AlGaAs / GaAs HEMT的可靠性研究
8. Analytical and numerical study of GaAs/AlGaAs based multiple quantum wells heigh electron mobility transistors (HEMTs) [R] . Nawaz, M, Jensen, GU 1995

机译：基于Gaas / alGaas的多量子阱高电子迁移率晶体管（HEmT）的分析和数值研究

An investigation on the reliability of AlGaAs/GaAs HEMTs

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