Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

摘要

We report both on the design by numerical simulation of pseudomorphic HEMTs with p-doped and undoped buffer layers and on their fabrication. We report that the p-buffer helps to reduce short channel effects in scaled 100 nm devices. To the authors' knowledge this is the first time that the application of p-doped buffer layers to HEMTs has been demonstrated.