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A finite-memory approach to the nonlinear modelling of microwave electron devices

机译:微波电子器件非线性建模的有限记忆法

摘要

A technology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the notitinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach.
机译:针对基于查询表的电子设备非线性建模,提出了一种与技术无关的数学方法。该模型即使在存在重要的寄生和低频色散效应的情况下,也可以在高工作频率下进行准确的大信号性能预测。黑匣子模型的所有notitinear功能都与可以使用自动仪器执行的常规测量直接相关。初步实验结果证实了该方法的有效性。

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