Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth

摘要

GaN HFETs have been proposed for high power high linearity and high bandwidth applications andreached tremendous output power levels [1]. However, there are relatively few circuit examples especially for wideband power amplifiers fulfilling the requirements of future multiband/multistandard capable 3G/4G base stations. This work presents first promising results of realised GaN based wideband power amplifier demonstrators for the mentionedfield of application. Two different amplifier concepts for thefinal stage of a power amplifier module for medium range multiband base station applications in the L- and S-Bandhave been implemented as first amplifier demonstrators. Theamplifiers have been characterized by using single carrierW-CDMA signals and showed a promising high bandwidthfor output power levels up to > 10 W while meeting the3GPP ACLR specification in a wide frequency range.