RF Noise and Power Performances of AlGaN/GaN onudSi(111) Substrates making of low cost modules.

摘要

High performances was achieved on AlGaN/GaN HEMTs based on Si(111). Devices with 0.17-µm and 0.3-µm gate lengths are fabricated on two different layer growth at TIGER laboratory. RF noise and power performances are carried out on these transistors. udThe 0.17 x 100 µm2 devices exhibit a unity current gain cutoffudfrequency (ft) of 46 GHz, and a maximum frequency (fmax)udof 92 GHz at VDS = 10 V. Also, a minimum noise figureud(NFmin) of 1.1 dB and an available associated gain (Gass) ofud12 dB are obtained at VDS = 10 V and f = 10 GHz. The 0.3 ud300 µm2 devices demonstrate a drain-to-source currentuddensity Ids = 925 mA/mm at VGS = 0 V and a maximumudextrinsic transconductance (Gm) of 250 mS/mm.udFurthermore, a high output power density of 1.9 W/mmudassociated to a PAE of 18% and a linear gain of 16 dB areudmeasured at f = 10 GHz and VDS = 30 V.udThese performances are the best ever reported for AlGaN/GaNudHEMTs based on silicon substrates at this frequency.