An Array-Based Design Methodology for theudRealisation of 94GHz MMMIC Amplifiers

摘要

In this paper we report an array-baseduddesign methodology for the realisation of monolithicudmillimetre-wave integrated circuits (MMMICs). This workudfocuses on the realisation of a 94GHz MMMIC amplifierudusing an array-based approach by integrating highudperformance 50nm T-gate InP-HEMTs with an fT ofud480GHz and a Si3N4 Metal Insulator Metal (MIM) capacitorudtechnology formed using room temperature inductivelyudcoupled plasma chemical vapour deposition (ICP-CVD)udnitride deposition together with a range of moreudconventional coplanar waveguide-based passiveudcomponents. A single stage amplifier, predicted to have audgain of 8 dB and return loss of better than –10dB at 94 GHz,uddemonstrated experimentally a gain of 8dB and a returnudloss of better than -6dB across a bandwidth of 7GHz fromud89GHz to 96GHz at the designed bias point . The use of audroom temperature nitride deposition process allows alludpassive components to be realised after active deviceudrealisation, and enables a mm-wave “sea-of-gates” arraybaseduddesign methodology.