A silicon self-aligned-emitter bipolar processudfrom STMicroelectronics for very high efficiency handsetsudpower applications has been used to build two DielectricudResonator Oscillators. Despite this technology addresses theudmobile telephony frequency range at 1.8GHz, the oscillatorsudgenerate a stable reference at 6GHz and 7.5GHz with goodudphase noise performance. A low frequency noise model hasudbeen identified and implemented in a Gummel Poon BJTudnonlinear model. A design technique to optimize stabilityudand phase noise performances has been used. The DROsudexhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHzudoffset from the carrier at 6GHz and 7.5GHz, respectively.
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