Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology

摘要

In this paper, we present a 10/30GHz MMIC Tripler, an X-band VCO and a frequency divider using a 0.35 µm, 60 GHz-fMAX MMIC BiCMOS SiGe technology. The Tripler exhibits a conversion gain of -5 dB and a low additive phase noise of –143dBc/Hz at a frequency offset of 100kHz is anticipated. In order to drive this Tripler, the design of a MMIC X-band VCO and its measured performance (0.8GHz tuning range, -5 dBm output power and –87dBc/Hz phase noise @ 100kHz of carrier) is also reported. This X band VCO can also drive a frequency divider, developed in the same technology. The assembling of these circuits allows the design of a 2 GHz frequency synthesizer. Measurements have shown a phase noise of -99dBc/ Hz at a frequency offset of 100kHz. Therefore, this paper demonstrates the great capabilities of BiCMOS SiGe MMIC technology about frequency synthesis ranging from 2GHz to 30GHz.