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A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCOud

机译:宽带低压低相位噪声10GHz SiGe可切换VCO ud

摘要

This paper describes a fully integrated Silicon Germanium (SiGe)Voltage Controlled Oscillator (VCO)chip with 19%tuning range and low phase noise suitable for 10-Gb/s fiber optic transceivers and X-band applications.It consists of two switchable externally enabled VCO ’s.The total chip tuning range is 9.2-11.1GHz when the varactor control voltage varies from 0 to 3.0V and the measured phase noise is –87dBc/Hz at 100KHz offset from carrier.The typical current consumption is 8mA for the VCO core at 3.3V voltage supply.The chip is implemented in SiGe BiCMOS7 technology intended for high volume production.
机译:本文介绍了一种完全集成的硅锗(SiGe)电压控制振荡器(VCO)芯片,该芯片具有19%的调谐范围和低相位噪声,适用于10 Gb / s光纤收发器和X波段应用,由两个可外部切换的开关组成VCO。当变容二极管控制电压在0到3.0V之间变化并且在距载波100KHz处测得的相位噪声为–87dBc / Hz时,芯片的总调谐范围为9.2-11.1GHz。VCO的典型电流消耗为8mA。内核采用3.3V电压供电。该芯片采用旨在大规模生产的SiGe BiCMOS7技术实现。

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