A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system

摘要

A bi-directional amplifier (BDA) utilizing the negative resistance of Heterojunction Interband Tunnel Diode (HITD) is proposed. Expected features of the BDA are: 1) symmetry and reciprocity of the associated scattering matrix; 2) gain at extremely low DC power consumption. These features make the circuits an enabling electronic function for RF identification tag. The BDA topology consisted of a pair of HITDs biased in the negative dynamic region (NDR) and a lumped element directional coupler with arbitrary impedance terminations. The design techniques along with an experimental validation are provided.