Modelling of low-frequency dispersive effects in GaAs and InP HEMTs

摘要

A previously proposed approach for modelling the dispersive effects in III-V FET devices is applied to InP and GaAs HEMTs in order to verify its validity also for heterostructure-based devices and to confirm its technology independence. Both surface states, bulk traps and thermal dispersive phenomena are simultaneously taken into account to allow for a better prediction of the deviations between dynamic (e.g., pulsed) and static drain current characteristics.