A Practical Method of Parameter Extraction for the VBIC Model used on a GaAs HBT.

摘要

This paper shows a simple practical method of extracting the major parameters in the VBIC model used on a GaAs HBT. The method was developed mainly for the circuit designer, who want to have an easy practical way of extracting good model parameters from a few simple measurements, and due to the lack of such simple methods for the VBIC model used on GaAs HBT. The extraction method is based on a semi-analytic approach. The method includes a simple analytic extraction of the non-ideal current sources Iben, Nen, Ibcn and Ncn. The algorithm for the parameter extraction is presented. To verify the method, measurements from Caswell Technology were used. The extracted model shows good agreement with measurements.