Artificial pyroelectricity in i-GaAs and its possible application

摘要

GaAs is a material exhibiting the most promise for micro­wave microelectronics. This work shows that polyfunctional properties of i-GaAs and other 111-V semi-insulating crystals would be expanded by the artificial decreasing of their electric response symmetry that could be transformed from the piezo- into a pyroelectric class. Gene­rated by temperature gradient of by partial clamping "pyroelectric" field is extremely dependent on crystal orientation that must be taken into account as one of the reasons of powerful microwave devices degra­dation. New effect would be applied also for some MMIC fi1ter-selector devices and as new type of "pyroelectric" sensor. The last is possible to use as small integrated pyrotransistors for very fast temperature control in the vicinity of powerful MESFET or HEMT devices and laser diodes as we11.