Small sized high-gain PHEMT high-power amplifiers for X-BAND applications

摘要

The development of two small sized broadband X-band high-power amplifiers is discussed. The amplifiers are realised with the help of the pseudomorphic HEMT technology of the Fraunhofer Institute for Applied Solid State Physics (FhG-IAF). With the help of this technology the feasibility of integrating a driver and high-power amplifier on a single, small sized, chip is demonstrated. This integration will reduce the number of chips necessary in a Transmit/Receive (T/R) module used in e.g. a phased-array radar antenna. Consequently, the cost of a T/R module is reduced.