InGaP Power HBTs : Basic power cells for High Power transistors

摘要

Power HBT Technology offers today the best compromise for high power – high efficiency amplifiers up to Ku band. Many improvements have been published in the past to offer a better behaviour in terms of thermal heating and microwave performances. Since the reliability limiting factors have been solved, significant improvements could be proposed to get more power. In this paper, we report on the proposal of new elementary cells used in multi-finger transistors. Based on these, compact very high power amplifiers could be considered.ud