Robust GaN HEMT Low-Noise Amplifier MMICsudfor X-Band Applications

摘要

This work presents MMIC low-noise amplifiersudbased on AlGaN/GaN HEMT technology on SiC substrate forudrobust receiver applications at X-band between 8 GHz andud11 GHz. Three versions of one-stage and two versions of two-stage amplifiers are presented with a noise figure of 1.81 dB at 10 GHz and 18 dB of small-signal gain for the two-stage device fully integrated in coplanar passive technology. The paper describes modeling and circuit design, bias dependence of the small-signal and noise circuit parameters of the MMICs realized, and highpower and intermodulation behavior.