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Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

机译：溶液处理的金属氧化物半导体及其器件的超薄层中的量子能态签名

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Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.;
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1. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices [J] . John G. Labram, Yen-Hung Lin, Kui Zhao, Advanced Functional Materials . 2015,第11期

机译：溶液处理的金属氧化物半导体及其器件的超薄层中的量子能态签名
2. Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide Semiconductor Devices [J] . Nature reviews Cancer . 2020,第2期

机译：超薄GE3N4钝化层对HFO2 / GE金属氧化物半导体器件结构，界面和电性能的影响
3. Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide Semiconductor Devices [J] . Mallem Kumar, Chandra S. V. Jagadeesh, Ju Minkyu, Journal of nanoscience and nanotechnology . 2020,第2期

机译：超薄GE3N4钝化层对HFO2 / GE金属氧化物半导体器件结构，界面和电性能的影响
4. Aluminum Oxide as a Dielectric and Passivation Layer for (flexible) Metal-Oxide and 2D Semiconductor Devices [C] . Alwin Daus, Connor J. McClellan, Kirstin Schauble, Conference on Oxide-based Materials and Devices . 2021

机译：氧化铝作为（柔性）金属氧化物和2D半导体器件的介电和钝化层
5. Correlation of Electrical Defects and Device Performance for Wide Bandgap Metal-Oxide Semiconductors [D] . Park, Jin hee. 2017

机译：宽带隙金属氧化物半导体的电缺陷与器件性能的相关性
6. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature [O] . Byoung-Soo Yu, Jun-Young Jeon, Byeong-Cheol Kang, -1

机译：具有固溶处理的金属氧化物半导体和介电膜的可穿戴式1 V工作薄膜晶体管通过低温深紫外光退火在低温下制成
7. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices [O] . Labram JG, Lin Y-H, Zhao K, 2014

机译：溶液加工的金属氧化物半导体及其器件超薄层中量化能态的特征
8. Noise Characteristics of MOS (Metal-Oxide Semiconductors) Devices Degraded by Electrical Overstressings [R] . Neelakantaswamy, P. S., Turkman, I. R. 1987

机译：电气过压导致mOs（金属氧化物半导体）器件噪声特性的降低

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

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