In this paper, a three dimensional model for the giant magneto-impedance (GMI) effect in thin film structures is developed using the finite element method(FEM) with a GMI permeability model embedded. One-layer, three-layer, and five-layer thin film structures are simulated. The GMI effect and the sensitivity are calculated as a function of the external magnetic field, driving frequency, and the thickness of the magnetic layers. The results show that the five-layer structure has the best performance, which is in accordance with experimental results. The GMI ratio and the sensitivity first improve with the increasing thickness of the magnetic layer but reach saturation at a certain value of the thickness. In a five-layer structure,saturation of the GMI effect becomes effective at about 3 μm thickness of the magnetic layers, where a GMI ratio of 1125% was obtained, with a corresponding sensitivity of 0.37%/A/m (29.6%/Oe).
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机译：本文利用嵌入了GMI磁导率模型的有限元方法（FEM）建立了薄膜结构中巨磁阻抗（GMI）效应的三维模型。模拟了一层，三层和五层薄膜结构。根据外部磁场，驱动频率和磁性层的厚度来计算GMI效应和灵敏度。结果表明，五层结构具有最佳性能，与实验结果吻合。 GMI比和灵敏度首先随着磁性层厚度的增加而提高，但是在厚度的某个值处达到饱和。在五层结构中，GMI效应的饱和在磁性层的厚度约为3μm时有效，其中GMI比率为1125％，相应的灵敏度为0.37％/ A / m（29.6％/ Oe ）。
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