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Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

机译：基于氧离子推挽机制的双功能记忆和阈值电阻切换

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Huang Yi-Jen; Chao Shih-Chun; Lien Der-Hsien; Wen Cheng-Yen; He Jr-Hau; Lee Si-Chen;
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年度 2016
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1. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions [J] . Yi-Jen Huang, Shih-Chun Chao, Der-Hsien Lien, Scientific reports. . 2016,第1期

机译：基于氧离子推拉机构的双功能存储器和阈值电阻切换
2. Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells [J] . Tornil-Sin S., Siminiceanu R.I., Sung Y.M., Device and Materials Reliability, IEEE Transactions on . 2013,第1期

机译：基于氮化锆的电阻切换存储单元中观察到的双极电阻切换现象和电阻切换机制
3. ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels [J] . Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Applied Physics Letters . 2012,第7期

机译：基于氧空位传导通道的形成和破坏的电阻式随机存取存储器的通断机制
4. Irregular Resistive Switching Characteristics and Its Mechanism based on NiO Unipolar Switching Resistive Random Access Memory (RRAM) [C] . Kyung-Chang Ryoo, Jeong-Hoon Oh, Hongsik Jeong, Silicon Nanoelectronics Workshop . 2010

机译：基于NIO Unipolar开关电阻随机存取存储器（RRAM）的不规则电阻开关特性及其机制
5. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [D] . Waite, Ruth I. 1987

机译：多层薄膜磁阻存储元件的开关阈值研究
6. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions [O] . Yi-Jen Huang, Shih-Chun Chao, Der-Hsien Lien, -1

机译：基于氧离子推挽机制的双功能记忆和阈值电阻切换
7. Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device [O] . -1

机译：基于全无机铷铅 - 溴化溴化铜矿的柔性装置的顺应性电流依赖性双功能双极和阈值电阻切换

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

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