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Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

机译:通过嵌入式微风道增强单晶超薄硅的冷却

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摘要

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.
机译:在当今的数字世界中,互补金属氧化物半导体(CMOS)技术实现了基于块状单晶硅(100)的电子产品的缩放,从而带来了更高的性能,但动态和断态功耗却增加了。这种折衷导致过多的热量产生,最终消耗了便携式设备中的电池电量。利用片外风扇和用于散热管理的散热器的传统解决方案使整个系统体积庞大且移动性较差。在这里,我们展示了通过利用垂直“穿过硅”微空气通道的多孔网络的确定性模式,超薄(> 10μm)单晶(100)硅(从块状衬底分离)中的增强的冷却现象。超级移动电子产品的热量和重量管理,以经济高效的方式实现,在持续负载下,基板重量减少了20倍,最高温度降低了12%。我们还展示了此事件在具有高κ/金属栅叠层的功能MOS场效应晶体管(MOSFET)中的有效性。

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