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Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

机译:原位Gd纳米层上具有高电导率的均相垂直ZnO纳米棒阵列

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摘要

We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study shows that an in situ transparent and conductive Gd nanolayer (with a uniform thickness of ∼1 nm) at the interface between a lattice-matched (11-20) a-sapphire substrate and ZnO is formed during the deposition. This nanolayer significantly induces a relaxation mechanism that controls the dislocation distribution along the growth direction; which consequently improves the formation of homogeneous vertically aligned ZnO NRs. We demonstrate that both the lattice orientation of the substrate and the Gd characteristics are important in enhancing the NR synthesis, and we report precise control of the NR density by changing the oxygen partial pressure. We show that these NRs possess high optical and electrical quality, with a mobility of 177 cm2 (V s)-1, which is comparable to the best-reported mobility of ZnO NRs. Therefore, this new and simple method has significant potential for improving the performance of materials used in a wide range of electronic and optoelectronic applications.
机译:我们演示了一种新颖的,一步一步的,无催化剂的方法,该方法通过使用掺Gd的ZnO靶进行脉冲激光沉积来生产具有高度理想特性的尺寸可控的垂直高导电性ZnO纳米棒(NR)阵列。我们的研究表明,在沉积过程中,在晶格匹配的(11-20)蓝宝石衬底与ZnO之间的界面处形成了原位透明且导电的Gd纳米层(均匀厚度约为1 nm)。该纳米层显着诱导了弛豫机制,该弛豫机制控制了沿着生长方向的位错分布。因此改善了均匀垂直排列的ZnO NR的形成。我们证明了衬底的晶格取向和Gd特性在增强NR合成方面都很重要,并且我们报告了通过改变氧分压来精确控制NR密度。我们表明,这些NRs具有较高的光学和电学质量,其迁移率为177 cm2(V s)-1,与ZnO NRs的最佳报道的迁移率相当。因此,这种新颖而简单的方法对于改善广泛用于电子和光电应用中的材料的性能具有巨大的潜力。

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