We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.
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机译：我们在外部垂直磁场中报告了单层石墨烯器件的量子电容，其中包括Rashba自旋轨道相互作用（SOI）的影响。 SOI将相邻的Landau层的向上旋转状态和向下旋转状态混合为两个（不等距）能量分支。为了研究SOI在电子传输中的作用，我们研究了态密度以探测单层石墨烯的量子电容.SOI对量子磁振荡的影响（Shubnikov de Haas和de Hass-van Alphen）由量子推论得出电容。
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