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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

机译:自组装的InAs / InP量子点和量子破折号:材料结构和器件

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摘要

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.
机译:激光,电子和光子集成电路(EPIC),光学互连以及调制技术的进步使当今社会能够拥抱宽带,高速互联网和移动网络连接的便利。但是,能源需求和带宽需求的急剧增加要求在超紧凑EPIC技术上进行进一步的创新。在光学领域,超越当前基于量子阱(Qwell)的激光技术的激光技术已经在进步,并呈现出令人鼓舞的结果。均质生长的量子点(Qdot)激光器和光放大器可以在未来的节能信息和通信技术(ICT)中用作通过光纤传输和放大信息的主力军。令人鼓舞的结果是,以垂直腔表面发射激光器(VCSEL)的形式在980 nm处发射的零维(0D)结构已经在低阈值电流密度下工作,并能够在108 fJ的速率下实现40 Gbps无错误传输/位。在O波段,C波段,L波段,U波段以及更高波段工作的激光器和放大器的后续成就最终将为绿色ICT奠定基础。另一方面,非均匀生长的准0D量子破折号(Qdash)激光器是用于服务器场或接入网中潜在宽带连接的出色解决方案。在受激发射模式下运行的单个宽带Qdash激光器可以代替密集波分复用(DWDM)传输中的数十个离散窄带激光器,从而进一步节省能源,成本和占地面积。本文我们从生长和器件性能的角度回顾了基于InAs / InGaAlAs / InP和InAs / InGaAsP / InP材料系统的Qdot和Qdash器件的进展。特别是,我们讨论了激光器,半导体光放大器(SOA),锁模激光器和超发光二极管的进步,这些都是EPIC和ICT的基础。可替代地,这些光源是其他多学科领域应用的潜在候选者。

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