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Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

机译:超低功耗单片集成NEMS-CMOS电路的线纳米继电器后端

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摘要

Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS)udtechnology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices areudintrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations.udIn this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of devices. To verify the performance of the proposed model, complex logic circuits built exclusively with relays, and also, hybrid CMOS-NEM circuits are simulated and verified. Finally, these novel topologies are reviewed and discussed as low-power alternatives to currentudCMOS topologies.
机译:自从引入互补金属氧化物半导体(CMOS) ud技术以来,芯片行业已享受晶体管特征尺寸缩放的许多好处,包括更高的速度和更高的器件密度以及更高的能效。但是,近年来,IC设计人员遇到了一些障碍,即达到定标的物理极限,并且器件泄漏增加,导致电源电压和功率密度定标的速度变慢。因此,人们一直在寻找可以减轻或消除半导体行业当前危机的替代电路架构和开关设备。纳米电子机械(NEM)继电器是一种很有前途的替代开关,可提供零泄漏和突然的开启行为。即使这些设备在原理上比CMOS晶体管慢,但可以利用为此类设备的机电性能量身定制的新电路设计技术来设计中等性能的超低功耗集成电路。在本文中,我们介绍了新一代此类器件,它们是在后端(BEOL)CMOS工艺中构建的,是与当前CMOS晶体管技术完全集成的理想选择。在电路和系统级别的仿真和验证是微电子电路设计流程中的关键步骤,这对于缺少标准设计基础结构和知名验证平台的新技术尤为重要。尽管可以使用标准的电子自动化软件来模拟NEM结构的大多数物理和电气特性,但尚无用于大型电路仿真的NEMS开关可靠行为模型的报告。 BEOL纳米继电器涵盖了该设备的所有机电特性,并且坚固耐用且轻巧,足以用于需要模拟数千个设备的VLSI应用。为了验证所提出模型的性能,模拟并验证了仅用继电器构建的复杂逻辑电路以及混合CMOS-NEM电路。最后,对这些新颖的拓扑进行了回顾和讨论,以作为当前 udCMOS拓扑的低功耗替代方案。

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