The electronic and structural properties for RF magnetron sputtering deposited ZnO thin films grown on Siudsubstrate was obtained by using X-ray diffraction (XRD) and reflection electron energy loss spectroscopy (REELS).udXRD spectra show the intensity of the diffraction peak increases with increasing the growth temperature with (002) isudstrongest diffraction peak. The particle sizes for (002) are increase from 10.2 nm to 60.2 nm with increasing growth udC, respectively. The band gap of ZnO thin films REELS spectra are 3.10.1udeV. The dominant peak from REELS at about 18 eV is ascribed to a bulk Plasmon excitation, which represents theudcollective oscillation of the valence electrons excited by the incident fast electrons.
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