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Characterization of efficiency enhancement in microchannel plate detectors

机译:微通道板检测器效率增强的表征

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摘要

The detection efficiency of a channel-plate detector is mainly determined by the open area ratio of its input face, which is typically 60%-70%. It is known that the efficiency can be enhanced by applying an electric field normal to the channel-plate surface, such that secondary electrons generated when ions strike the channel-plate surface are returned to the detector. This paper characterises the enhancement observed in channel-plate detectors for atom probe and 3-dimensional atom probe applications. In a double channel-plate detector, it was found that improvement in efficiency was approximately 30% as compared to the situation where all secondary events are lost. The secondary electron events are found to have a broader pulse height distribution, with a mean which is a factor of three lower than that of the primary ion events. Using the variation of efficiency with grid voltage, the maximum secondary electron energy was estimated to be 10eV. This value was used to calculate the loss in time and spatial resolution which would result from the detection of secondary electrons. These effects are shown to be acceptably small within a 3-dimensional atom probe detector design, for a wide range of bias voltages. Previous work has suggested that the efficiency gain from a biassed grid drops off at grid fields in the range 25-100V/mm. This effect is shown to have been generated by field fringing effects.
机译:通道板检测器的检测效率主要取决于其输入面的开口率,通常为60%-70%。已知可以通过施加垂直于通道板表面的电场来提高效率,使得当离子撞击通道板表面时产生的二次电子返回到检测器。本文描述了在原子探测器和3维原子探测器应用的通道板检测器中观察到的增强特性。在双通道板检测器中,发现与所有次级事件都丢失的情况相比,效率提高了约30%。发现二次电子事件具有较宽的脉冲高度分布,其平均值比一次离子事件的平均值低三倍。使用效率随电网电压的变化,最大二次电子能量估计为10eV。该值用于计算由于二次电子的检测而导致的时间和空间分辨率的损失。对于宽范围的偏置电压,这些效果在3维原子探针探测器设计中显示为可接受的小。先前的工作表明,偏置栅的效率增益在25-100V / mm范围的栅场处下降。已表明该效应是由场边缘效应产生的。

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