Thermal simulation of a stack consists of three IC layers bonded “face up” is performed. It is shown that by inserting electrically isolated thermal through silicon via (TTSV) having Cu core and CVD diamond as a liner shell that extends across the layers to substrate, significant temperature reduction up to (103K) 62% can be achieved which also reflected through almost 60% reduction in thermal resistivity. Additionally simple microchannel integration with IC 3 layer and allowed fluid flow through the channel show transient temperature reduction. TTSV is also shown to be effective in mitigating severe heat dissipation issue facing 3-D IC bonded “face down” and logic layer stacked on memory substrate.
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