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5-Bit RF MEMS Phase Shifter Development in Ku Band for Phased Array Applications

机译:Ku频段的5位RF MEMS相移器开发,用于相控阵应用

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摘要

MEMS based devices represent an extremely attractive alternative to MESFET devices for realization of the programmable phase shifters. The stable operation of RF MEMS devices is impacted by the actuation voltage, restoration force and the structural stresses. These can induce severe functional deformities into the device leading to operational problems. These parameters can be optimized by the concept of built-in reliability through design. In the present work, the study of Ku band 5-bit MEMS phase shifter was associated with the switch development. The hybrid design topology of switched and loaded line was adopted for the phase shifter. This topology has been the best trade off among large phase shift, low loss and reduced space requirement in the defined frequency band. This approach requires 18 switches per 5-bit phase shifter and all must work simultaneously in order to achieve the phase shifter fully functional. Hence the study was initiated with switch development keeping the focus on the above mentioned parameters.
机译:基于MEMS的器件代表了MESFET器件的极具吸引力的替代方案,以实现可编程移相器。 RF MEMS器件的稳定运行会受到驱动电压,恢复力和结构应力的影响。这些会导致设备严重的功能变形,从而导致操作问题。可以通过设计内置的可靠性概念来优化这些参数。在当前的工作中,对Ku波段5位MEMS移相器的研究与开关的开发有关。移相器和负载线采用混合设计拓扑。在已定义的频带中,这种拓扑结构是大相移,低损耗和减小空间需求之间的最佳折衷方案。这种方法每5位移相器需要18个开关,并且所有开关必须同时工作才能使移相器完全发挥作用。因此,这项研究始于开关的开发,并始终专注于上述参数。

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    Sharma A K;

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  • 年度 2013
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  • 正文语种 en
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