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A low/high band highly linearized reconfigurable down conversion mixer in 65nm CMOS process

机译:采用65nm CMOS工艺的低/高频带高度线性化的可重构下变频混频器

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摘要

This paper presents a universal down conversion mixer for a multistandard wireless receiver with adapted reconfigurability in the form of RF bandwidth, active/passive and IF bandwidth. In the proposed architecture RF bandwidth reconfigurability is reconfigured between low band (LB) RF frequency and high band (HB) RF frequency mixer modes. LB / HB reconfigurability is made through power switching the transconductance amplifier. Active / Passive reconfigurability is made through switching the input signal between gate and source terminal of input transistors and enabling/disabling the transimpedance stage at the output. The CMOS transmission gate (TG) switches are designed to provide optimum headroom in this low voltage design. The proposed circuit is designed in the UMC 65nm RFCMOS technology with 1.2V supply voltage. From the simulation results, the proposed circuit shows conversion gain of 22/26 dB and 25/31 dB, noise figure of 14.2/12.1 dB and 11.5/8.16 dB, IIP3 of 10/8.1 dBm and 6.4/3 dBm in LB and HB respectively where all these figures suggest passive/active mode. Hence this circuit will be much helpful in multi-standard receiver design.
机译:本文提出了一种适用于多标准无线接收机的通用下变频混频器,具有射频带宽,有源/无源和中频带宽等形式的可重构性。在所提出的架构中,RF带宽可重新配置性在低频带(LB)射频频率和高频带(HB)射频混频器模式之间重新配置。 LB / HB的可重配置性是通过对跨导放大器进行电源开关来实现的。通过在输入晶体管的栅极和源极端子之间切换输入信号并在输出端启用/禁用跨阻级,可以实现主动/被动可重构性。 CMOS传输门(TG)开关旨在在这种低压设计中提供最佳的裕量。拟议中的电路采用UMC 65nm RFCMOS技术设计,电源电压为1.2V。从仿真结果来看,所建议的电路在LB和HB中显示出22/26 dB和25/31 dB的转换增益,14.2 / 12.1 dB和11.5 / 8.16 dB的噪声系数,10 / 8.1 dBm和6.4 / 3 dBm的IIP3所有这些数字都建议采用被动/主动模式。因此,该电路在多标准接收机设计中将非常有帮助。

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