首页> 外文OA文献 >ELABORATION, ETUDE DES PROPRIETES STRUCTURALES ET MAGNETIQUES DE COUCHES ET RESEAUX DE PLOTS SUBMICRONIQUES A BASE DE COBALT
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ELABORATION, ETUDE DES PROPRIETES STRUCTURALES ET MAGNETIQUES DE COUCHES ET RESEAUX DE PLOTS SUBMICRONIQUES A BASE DE COBALT

机译:钴基亚微米图和阵列的结构和磁性能的研究,开发

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摘要

In the first part of this doctoral work, we have studied the correlation between the magneticdomain structure and the macroscopic magnetic properties of epitaxial cobalt thin films withthicknesses varying from 10 to 500 nm. The growth was optimised to get the cobalt film in thehexagonal (0001) cristalline phase. In this cristallographic structure, the magnetocristallineanisotropy is very strong and along the c-axis. This strong perpendicular anisotropy forces thecobalt to split in domains in which the magnetization turns from fully in plane to fully out ofplane as the film thickness is increased from 10 to 50 nm. For thicknesses above 50 nm, thedomain structure depending on the magnetic history may consists of bubbles, stripes orlabyrinthine. The domain topology is independent on the film thickness while the periodicityof the domains varies from 100 to 400 nm and is proportional to the squareroot of the filmthickness. We have shown that these well characterized films appear to be model systems forthe study of magnetoresistance through magnetic wall as well as observation of domain wallresonance at high frequency.In the second part of this work, the structural and magnetic properties of square dot arrayswith dot lateral dimension of 0.5 μm and lattice periodicity of 1 μm have been studied. Thearrays 5 by 5 mm² were patterned from the epitaxial cobalt films using X-ray lithography. Wehave shown that the magnetization reorients from in-plane to perpendicular as a function ofdot height. Interestingly, the magnetic domains are shown to be geometrically constrained bythe side of the dots. For thick dots, the lateral extension of domains is comparable to the sizeof the dots leading to the constrain of the perpendicular component of magnetization. For the25 nm thick dots, the geometrical constrain of the parallel component of magnetization leadsto the stabilization of a vortex domain structure with circular rings. Starting from thisstructure, the magnetization curve displays one pronounced jump of magnetization whichimplies that the reversal of the magnetization occurs through the collapse of the vortexdomain structure. Moreover, magnetic phase transition occurs when the temperature islowered. The magnetization in each domain switches as a function of temperature frommainly in-plane into a fully perpendicular domain structure.
机译:在此博士论文的第一部分中,我们研究了厚度在10至500 nm之间的外延钴薄膜的磁畴结构与宏观磁性能之间的相关性。优化生长以使钴膜处于六方晶(0001)结晶相。在这种晶体学结构中,磁晶界各向异性很强并且沿着c轴。这种强的垂直各向异性迫使钴在畴中分裂,其中随着膜厚度从10 nm增加到50 nm,磁化强度从完全在平面内变为完全不在平面内。对于大于50 nm的厚度,取决于磁历史的畴结构可能由气泡,条纹或迷宫素组成。畴拓扑结构与膜厚无关,而畴的周期性在100至400 nm之间变化,并且与膜厚的平方根成比例。我们已经证明这些特征良好的薄膜似乎是用于通过磁壁研究磁阻以及在高频下观察畴壁共振的模型系统。在第二部分,具有点横向的方点阵列的结构和磁性能已经研究了0.5μm的尺寸和1μm的晶格周期性。使用X射线光刻从外延钴膜上对5 x 5mm²的阵列进行构图。我们已经表明,磁化强度从平面内到垂直方向随点高变化。有趣的是,显示出磁畴在几何上受点的侧面约束。对于较粗的点,畴的横向延伸与点的大小相当,从而导致磁化的垂直分量受到约束。对于25 nm厚的点,磁化平行分量的几何约束导致带有圆环的涡旋畴结构稳定。从这种结构开始,磁化曲线显示出一个明显的磁化跃迁,这表明磁化的逆转是通过涡旋畴结构的崩溃而发生的。而且,当温度降低时,发生磁性相变。每个畴中的磁化强度随温度的变化而从平面内转换为完全垂直的畴结构。

著录项

  • 作者

    HEHN Michel;

  • 作者单位
  • 年度 1997
  • 总页数
  • 原文格式 PDF
  • 正文语种 fr
  • 中图分类

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