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Composant photovoltaïque innovant à base d’hétérojonction GaP/Si

机译:基于GaP / Si异质结的创新光伏组件

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摘要

The main objective of this thesis is to study an alternative to conventional amorphous/crystalline silicon heterojunction solar cell using gallium phosphide (GaP) as an emitter layer. This would allow a performance improvement because of its optical and electrical properties. The potential of GaP/Si heterojunction solar cells have been evaluated by studying each of the critical issues inherent to their fabrication process. The chemical preparation of the substrates surface and the mechanisms controling the structure of the Si (100) surface have been studied in order to obtain a single domain silicon surface (with diatomic steps) and slightly roughened by homoepitaxy (UHV-CVD). This work was completed by the study of the impact of surface preparation (chemical preparation and homoepitaxy) of the substrate on the crystalline quality of GaP deposited in two steps by MBE and MEE. The growth of GaP by MEE was subsequently carried out on Si(100) substrates having only undergone a chemical surface preparation. MEE growth sequence parameters were studied and adjusted to optimize GaP nucleation. The structural quality of the thin films was evaluated by AFM and XRD characterizations. Thin films of 20 nm have lower surface roughness equivalent to an homoepitaxy and a volume fraction of MTs below the detection limit. The MEE growth ensures a 2D nucleation. However, TEM and STM characterizations reveal the presence of antiphase boundaries. In parallel, simulations of the structure HET GaP/Si (with AFORS-HET) have been performed to evaluate the potential of the structure. First, diodes and demonstrator cells with GaP/Si junction have been fabricated and optically/electrically characterized. Limitations in performance due to the presence of traps at the interface and silicon volume degradation have been observed. All this work has allowed us to identify the technological issues to overcome in order to fully exploit the GaP/Si heterojunction cells to improve solar cell performance.
机译:本文的主要目的是研究使用磷化镓(GaP)作为发射极层的常规非晶/晶体硅异质结太阳能电池的替代品。由于其光学和电学性质,这将允许性能改善。通过研究其制造工艺固有的每个关键问题,已经评估了GaP / Si异质结太阳能电池的潜力。为了获得单畴硅表面(具有双原子步骤)并通过均裂(UHV-CVD)稍微粗糙化,已经研究了衬底表面的化学制备和控制Si(100)表面结构的机理。这项工作是通过对MBE和MEE分两步进行的底物表面制备(化学制备和均质外延)对GaP结晶质量的影响进行研究而完成的。随后在仅进行化学表面处理的Si(100)衬底上通过MEE进行GaP的生长。研究了MEE生长序列参数并进行了调整,以优化GaP成核。通过AFM和XRD表征评估了薄膜的结构质量。 20 nm的薄膜具有较低的表面粗糙度,等效于同质外延,并且MT的体积分数低于检测极限。 MEE的增长可确保2D成核。但是,TEM和STM表征揭示了反相边界的存在。并行地,已经对结构HET GaP / Si(使用AFORS-HET)进行了仿真,以评估结构的潜力。首先,已经制造了具有GaP / Si结的二极管和演示单元,并对其进行了光学/电学表征。已经观察到由于界面处存在陷阱和硅体积降低而导致的性能限制。所有这些工作使我们能够确定要克服的技术问题,以便充分利用GaP / Si异质结电池来改善太阳能电池的性能。

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    Quinci Thomas;

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  • 年度 2015
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  • 原文格式 PDF
  • 正文语种 fr
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