This study consist in the development of a high frequency insulated DC/DC converter based on GaN power devices. The goal is to increase significantly the power density in comparison with actual converter solutions. This thesis evaluate the GaN components performances to determine the best working conditions. Once the critical points highlighted, gate circuit topologies suitable for EPC GaN HEMT are studied and an integrated IC is designed and implemented. The overall layout of the card has an important role in terms of integration and EMC optimization, so it is discussed and routing rules are proposed. Finally, we study several power structures and implement them to verify proper operation and their compliance with specifications.
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机译：这项研究包括开发基于GaN功率器件的高频绝缘DC / DC转换器。与实际的转换器解决方案相比，目标是显着提高功率密度。本文评估了GaN组件的性能，以确定最佳的工作条件。一旦突出了关键点，便研究了适用于EPC GaN HEMT的栅极电路拓扑，并设计并实现了集成IC。卡的总体布局在集成和EMC优化方面起着重要作用，因此进行了讨论并提出了路由规则。最后，我们研究了几种电源结构并加以实施，以验证其是否正常运行以及它们是否符合规范。
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