Conception et procédés de fabrication avancés pour l’électronique ultra-basse consommation en technologie CMOS 80 nm avec mémoire non volatile embarquée

摘要

The increase of the scope of application and the performance of microcontrollers is accompanied by an increase in power consumption reducing the life-time of mobile systems (smartphones, tablets, laptops, biomedical implants, …). Here, the work consists of reducing the dynamic consumption of circuits manufactured in embedded non-volatile memories (e-NVM) CMOS 80 nm technology by improving the performance of MOS transistors. In order to increase the carriers’ mobility, manufacturing techniques used in the most advanced technological nodes (40 nm, 32 nm) are firstly studied according to different criteria (process integration, cost, current/performance gain). Then, selected techniques are optimized and adapted to be used on an e-NVM technological platform. The next step is to study how to transform the current gain into dynamic power gain without impacting the static consumption. To do so, the supply voltage and the transistor widths are reduced. Up to 20 % in dynamic current gain is demonstrated using ring oscillators and a digital circuit designed with 20,000 standard cells. The methodology applied on the circuit allows automatic reduction to all transistor widths without additional design modifications. Finally, a last study is performed in order to optimize the consumption, the performance and the area of digital standard cells through design improvements and by reducing the mechanical stress of STI oxide.