Module wireless 60 GHz intégré en 3D sur silicium

摘要

The evolution of semi-conductor technology nodes has led to a significant miniaturization of today's RF front-ends and to the enhancement of the electrical performance of transceivers at higher frequencies. This leads to the diversification of RF/millimeter-wave (30 – 300 GHz) applications in the fields of telecommunications, multimedia entertainment, automotive and security. More specifically, telecommunications are going through a real revolution with the creation of new standards (such as WiGiG and IEEE 802.11ad) and the introduction of new network architectures based on point-to-point links as the backbone of the 5th generation of mobile networks. In this PhD work, we will focus on integrated wireless and low consumption modules operating in the 57 – 66 GHz band (generally designated as the 60 GHz band). At these frequencies, the free-space wavelength is comparable to the characteristic dimensions of most standard transceiver packages. This opens an opportunity to integrate the antennas as well as other passive components directly to the metal/dielectric stack or in the package. This new generation of electronic devices which are dedicated to the nomad terminal market brings new challenges in terms of electrical performance, mechanical reliability, cost and manufacturability. Microelectronic packaging plays in this case a key role in defining the global performance of the system. Its functions extend beyond the protection of the IC and cover other schemes with opportunities to integrate passive and active devices. This work focuses on the study of an SiP module (System-in-Package) featuring 3D integration on Silicon interposer. The dissertation comprises four chapters and is structured as follows: In the first chapter, a brief introduction of millimeter-waves and their propagation conditions is given. Then, examples of current and emerging civilian and military applications are addressed. State of the art of SiP/mmW modules is then presented according to different technology approaches proposed by industrial and academic contributors. The second chapter is dedicated to the study of a 60 GHz integrated module on a high-resistivity silicon interposer chip. We focus on electrical characterization methods which are adapted to different building blocks of the silicon back-end technology. These include interconnects, dielectrics and integrated antennas. The characterization steps also include full-scale and standard-compliant tests of two communicating 60 GHz modules. In the third chapter, we propose to improve the existing module with a novel antenna design based on a High-Impedance Surface (HIS) reflector. This design is intended to bring more compactness and higher reliability to the original one while conserving the overall electrical performance. Finally, the fourth chapter deals with the fabrications and experimental validation of the antenna test vehicle as well as the wideband characterization of the dielectrics used for the new stack.